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is engaged in developing, designing and licensing innovative technologies and chip architectures for nonvolatile semiconductor devices.
Spingate has been developing a proprietary 3rd generation of nonvolatile magnetic random access memory (MRAM) technology. The company's proprietary SpinRAM technology employs magnetic materials with perpendicular anisotropy and write mechanism based on spin-induced switching. SpinRAM has the smallest cell size (4F2) reported in the industry, excellent scalability, high write/read speed, low spin-polarized switching current, and excellent error rate during write and read operations. It can easily be arranged in a 3D architecture to store several bits of data per cell. 3D SpinRAM is a new type of a storage class memory that can effectively compete with NAND flash and even with enterprise HDD in performance, density and price/bit.
Spingate has been developing
a new class of nonvolatile SpinLogic that represents an elegant synthesis of conventional CMOS and spintronics technologies.
The company's proprietary SpinLogic technology combines logic functions with a storage capability.
Applications for the company's disruptive technologies include:
· nonvolatile standalone and embedded memories;
· nonvolatile
programmable logic devices;
· nonvolatile microcontrollers and microprocessors, etc.