is engaged in developing, designing and licensing innovative technologies and chip architectures for nonvolatile semiconductor devices.
Spingate invented and has been developing a proprietary 3rd generation of nonvolatile magnetic random access memory (MRAM) technology.
The company's MRAM has the smallest cell size 4F2 reported in the industry, excellent scalability, high write/read speed, and
low switching current. It can easily be arranged in a 3D architecture to store several bits of data per cell.
Spingate invented
and has been developing a new class of nonvolatile spin logic that represents an elegant synthesis of conventional CMOS and spintronics
technologies. The company's spin logic combines logic functions with a storage capability.
Applications for the company's disruptive technologies include:
· nonvolatile standalone and embedded memories;
· nonvolatile programmable logic devices;
· nonvolatile microcontrollers and microprocessors, etc.