Spingate's nonvolatile memory and logic technologies are based on spintronics that utilizes an electron spin rather than electron change to store and retrieve data. The company's technologies employ two recently discovered magnetic phenomena in magnetic multilayers: giant magnetoresistance and spin transfer switching.

The giant (or tunneling) magnetoresistance was discovered in 1988 and within ten years have been implemented into reading magnetic heads. This discovery along with other innovations allowed the magnetic storage industry to significantly increase the capacity of hard disk drives.

The spin transfer switching of magnetization orientation in magnetic multilayers was theoretically predicted in 1996 and experimentally demonstrated in 2000.  

Spintronics is the next step in evolution of magnetic storage technology that has more than a century-long history of storing and retrieving huge amounts of data. Currently more than 90% of new information in the world is stored using magnetic phenomena.

Combination of spintronics with CMOS technology provides a unique opportunity for creating several new classes of nonvolatile semiconductor devices, such as memory, FPGAs, microcontrollers, microprocessors and others. Spingate's MRAM and spin logic represent two bright outcomes of this combination.